Work

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Year: 2023

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0138939

Authors: Eungkyun Kim, Zexuan Zhang, Jimy Encomendero, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Cheng Wang, Patrick Fay, Masato Toita, Debdeep Jena, Huili Grace Xing

Institutions: Cornell University, University of Notre Dame, Asahi Kasei (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Semiconductor Research Corporation, Asahi Kasei Pharma Corporation

OpenAlex ID: W4322734241

FWCI: 4.573

Cites: 42

Cited by: 43

Related to: 10