Work

Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography

Year: 2023

Type: article

Source: ACS Applied Nano Materials

DOI: 10.1021/acsanm.2c03247

Authors: Dhanushkodi D. Mariappan, Sanha Kim, Junjie Zhao, Hangbo Zhao, Ulrich Muecke, Karen Gleason, Akintunde Ibitayo Akinwande, A. John Hart

Institutions: Massachusetts Institute of Technology, Korea Advanced Institute of Science and Technology

Language: English

Topic: Nanomaterials and Printing Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Massachusetts Institute of Technology, Division of Civil, Mechanical and Manufacturing Innovation

Awards: G2186462183, G4141934738

OpenAlex ID: W4361002579

FWCI: 0.447

Cites: 29

Cited by: 6

Related to: 10