Work

High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier

Year: 2023

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0134633

Authors: Yachao Zhang, Yaolong Dong, Kai Chen, Kui Dang, Yixin Yao, Baiqi Wang, Jinbang Ma, Wenjun Liu, Xing Wang, Jincheng Zhang, Yue Hao

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Fundamental Research Funds for Central Universities of the Central South University

Awards: G4162074646, G6874748396, G846836057

OpenAlex ID: W4362560613

FWCI: 1.423

Cites: 33

Cited by: 14

Related to: 10