Work

Self-Aligned Contact Doping of WSe2 Metal–Insulator–Semiconductor Field-Effect Transistors Using Hydrogen Silsesquioxane

Year: 2023

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.3c00211

Authors: Ho Hyun Im, Dongryul Lee, Geonyeop Lee, Hong-Yeol Kim, Jihyun Kim

Institutions: Korea University, Seoul National University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Korea Institute for Advancement of Technology, Institute of Civil-Military Technology Cooperation

Awards: G1332883877, G2572957395, G5442972664

OpenAlex ID: W4362698217

FWCI: 0.741

Cites: 46

Cited by: 11

Related to: 10