Electron structure effects of S-doped In2O3 flowers on NO2 sensitivity
Work
Year: 2023
Type: article
Source: Materials Research Bulletin
Institutions Beijing University of Technology, Hainan University, Xiangtan University, Hengyang Normal University
Cites: 44
Cited by: 9
Related to: 10
FWCI: 1.871
Citation percentile (by year/subfield): 100
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funders National Natural Science Foundation of China, National Natural Science Foundation of China, National Key Research and Development Program of China
Grant IDS 1774017, 52073243, 2021YFB3500403