Work

Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX

Year: 2023

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0149062

Authors: Chinmoy Nath Saha, Abhishek Vaidya, A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Shivam Sharma, Hongping Zhao, Uttam Singisetti

Institutions: University at Buffalo, State University of New York, The Ohio State University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Semiconductor Research Corporation, Air Force Office of Scientific Research

Awards: G2152459410, G3732328463, Collaborative Research: Beta-Ga2O3 high voltage power MOSFETs using metal-organic chemical vapor deposition, MRI:Acquisition of Ultra high Performance Electron Beam Lithography System for the Western New York Region

OpenAlex ID: W4368365223

FWCI: 4.053

Cites: 45

Cited by: 67

Related to: 10