Work

AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties

Year: 2023

Type: article

Abstract: A challenging development of an AlGaN-based solar-blind UV heterojunction bipolar phototransistor with a gain-type NPN structure.

Source: Journal of Materials Chemistry C

DOI: 10.1039/d3tc00317e

Authors: Yiren Chen, Jiawang Shi, Zhiwei Zhang, Guoqing Miao, Hong Jiang, Hang Song

Institutions: Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, State Key Laboratory of Luminescence and Application, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Funders: People's Government of Jilin Province, State Key Laboratory of Luminescence and Applications, Department of Science and Technology of Jilin Province

Awards: G1370225167, G5485174349

OpenAlex ID: W4376573486

FWCI: 0.939

Cites: 36

Cited by: 9

Related to: 10