Work

Doping density, not valency, influences catalytic metal-assisted plasma etching of silicon

Year: 2023

Type: article

Abstract: mixed gas plasma. At the highest dopant concentrations, both n- and p-type Si initially exhibit inhibition of the MAPE-enhanced etching. As the etch progresses, MAPE initiates, resulting in catalytic etching of the underlying Si at the metal-Si interface. Interestingly, MAPE-enhanced etching increases with decreasing doping concentrations for both n- and p-type Si substrates, distinct from results for the similar but divergent, metal-assisted chemical etching of silicon in liquid. Our findings show that the metal-Si interface remains essential to MAPE, and surface enrichment of the dopant atoms or other surface chemistries and the size of metal nanoparticles play roles in modulating catalytic activity.

Source: Materials Horizons

DOI: 10.1039/d3mh00649b

Authors: Julia B Sun, Namphung Peimyoo, James O Douglas, Benjamin D Almquist

Institution: Imperial College London

Language: English

Topic: Plasma Diagnostics and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: Imperial College London, Engineering and Physical Sciences Research Council, Biotechnology and Biological Sciences Research Council

Awards: A Facility for Cryo-Enabled Multi-microscopy for Nanoscale Analysis in the Engineering and Physical Sciences (Cryo-EPS), G3580628144, Biomimetic quantum-dot nanodonuts for membrane voltage imaging, G7436395277