Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires
Year: 2023
Type: article
Abstract: Selective area epitaxy is a promising approach to define nanowire networks for topological quantum computing. However, it is challenging to concurrently engineer nanowire morphology, for carrier confinement, and precision doping, to tune carrier density. We report a strategy to promote Si dopant incorporation and suppress dopant diffusion in remote doped InGaAs nanowires templated by GaAs nanomembrane networks. Growth of a dilute AlGaAs layer following doping of the GaAs nanomembrane induces incorporation of Si that otherwise segregates to the growth surface, enabling precise control of the spacing between the Si donors and the undoped InGaAs channel; a simple model captures the influence of Al on the Si incorporation rate. Finite element modeling confirms that a high electron density is produced in the channel.
Source: Nano Letters
Language: English
Subfield: Biomedical Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $5,000
Funders: National Science Foundation, W. M. Keck Foundation, Northwestern University, École Polytechnique Fédérale de Lausanne, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, Materials Research Science and Engineering Center, Harvard University, International Institute for Nanotechnology, Northwestern University, National Center of Competence in Research Quantum Science and Technology, Office of Naval Research, Division of Materials Research, Division of Electrical, Communications and Cyber Systems
Awards: G1169090945, NNCI: Soft Hybrid Nanotechnology Experimental (SHyNE) Resource, G1276186940, G1363675917, G1382933278, G1447794032, G1921142128, G2233802770, G2506509316, G2620038056, G2720967148, G2834933923, G3010471893, G336680401, G3454132534, G3485426190, G4285583887, G4289625387, MRSEC: Center for Multifunctional Materials, G4778125835, G4912152698, G4958141111, G5218300437, G5793179256, NNCI: Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource, G6125965842, Total Tomography of Nonplanar Heterostructures for Quantum Information Processing, G6343281070, G6457034350, G6540817556, MRI: Acquisition of a Local-Electrode Atom-Probe (LEAP) Microscope (An Atom-Probe Tomograph) For Three-Dimensional Nanoscale Characterization of Materials, G6894525921, G7026347881, Leveraging Structural Information in Regression Tree Ensembles, Total Tomography of III-V Non-Planar Heterostructures, G8073314406, G8230932042, G8445745868, G8876996369, G981067636
OpenAlex ID: W4383070523