Energetic, Electronic, and Optical Behavior of Intrinsic Charge Carrier-Trapping Defects in Ge-Doped ZnGa2O4: Insights from a DFT Study
Year: 2023
Type: article
Author: Brindaban Modak
Institutions: Bhabha Atomic Research Centre, Homi Bhabha National Institute
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4383740227