Work

2D Amorphous GaOX Gate Dielectric for β-Ga2O3 Field-Effect Transistors

Year: 2023

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.3c07126

Authors: Sanghyun Moon, Donggyu Lee, Jehwan Park, Jihyun Kim

Institution: Seoul National University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Seoul National University, Korea Institute for Advancement of Technology, National Research Foundation of Korea, Defense Acquisition Program Administration

Awards: G4659300705, G5442972664, G7878941583

OpenAlex ID: W4385295689

FWCI: 1.687

Cites: 61

Cited by: 28

Related to: 10