Interfacial Stress Induced Enhancement of Ferroelectricity in Al Doped Hfo2 Thin Films
Year: 2023
Type: preprint
Source: SSRN Electronic Journal
DOI: 10.2139/ssrn.4528240
Institution: Jiangsu University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4385452830
