Work

Physicochemical Analysis of Nanoscale Metal Oxide Thin Film Precursors via Infrared Spectroscopic Ellipsometry

Year: 2023
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide We present a nondestructive and highly sensitive experimental methodology for accurately controlling the chemical pathways of metal oxide formation in ultrathin films (∼10 nm) relevant for electronic devices, such as thin film transistors. Utilizing infrared spectroscopic ellipsometry (IRSE), we shed light on the individual sol–gel precursor conversion stages of In(NO 3 ) 3 and Zn(CH 3 COO) 2 films into In 2 O 3 and ZnO via a thermally induced reaction. Employing IR highly reflective substrates (TiN, Al, and Au), the intrinsic sensitivity of IRSE is enhanced; we present the chemical signatures of precursor byproducts, which are detected down to nanometer-scale thin films. We provide insights into the link between the chemical conversion, the substrate’s reflectivity, and IRSE sensitivity and propose a universal methodology for accurate physicochemical analysis of ultrathin films.
Language: English
Open Access status: hybrid
Estimated APC paid: $5,000
OpenAlex ID: W4385622777
FWCI: 0.44
Cites: 112
Cited by: 6
Related to: 10