Work

Band structure-based simulation and modeling of UTSOI MOSFETs

Year: 2023

Type: preprint

Abstract: UTSOI MOS devices enable the scaling of the channel length of MOS Transistors through scaling of the channel thickness and oxide thickness. Additionally, as they have a planar architecture similar to the conventional Bulk MOSFETs, these UTSOI MOSFETs have a simpler fabrication process compared to 3-D Transistors like FinFETs. Also, their performance can be efficiently tuned by applying a bias through the BOX. This allows a significant dynamic modulation of the speed/power trade-off, which is a powerful knob at the circuit level.

DOI: 10.36227/techrxiv.24065721.v1

Authors: Nalin Vilochan Mishra, Aditya S Medury

Institution: Indian Institute of Science Education and Research, Bhopal

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

OpenAlex ID: W4386356173

Cites: 31

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Related to: 10