Work

A High-q Solid Disk Baw Gyroscope in Monocrystalline 4h Silicon-carbide With Sub-ppm As-born Frequency Split

Year: 2022

Type: conference-paper

Abstract: This paper demonstrates, for the first time, a solid disk capacitive bulk-acoustic wave (BAW) gyroscope in monocrystalline 4H-SiC, with a promising angle random walk of 0.03°/√h, fabricated at wafer level using DRIE of a bonded SiC-on-Insulator (SiCOI) substrate.The 3MHz gyroscope operates in m=3 elliptical mode with a very small as-born frequency split of sub-ppm owing to the excellent in-plane isotropic lattice of 4H-SiC.Statistical data of resonator characterization across the 4-inch SiCOI wafer is reported, showing consistently small frequency splits and high Q factors, uncommon in Si substrates.The cross-coupling between two gyroscopic modes is compensated via electrostatic spring softening, while the 3mm disk resonator is driven to >300nm amplitude, paving the way towards the development of highperformance SiC BAW gyroscopes.

Source: Solid-State Sensors, Actuators, and Microsystems Workshop (Hilton Head Workshop)

DOI: 10.31438/trf.hh2022.17

Authors: Zhenming Liu, Ardalan Lotfi, Michael Hardin, Farrokh Ayazi

Institution: Georgia Institute of Technology

Language: English

Topic: Acoustic Wave Resonator Technologies

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: Army Research Laboratory

Awards: G4504942375, G5259331294, G56008422