Work

Investigations of 900V 4H-SiC Planar Power MOSFET for More Robust Reliability Performance

Year: 2023

Type: conference-paper

Source: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

DOI: 10.1109/ipfa58228.2023.10249098

Authors: Jake Choi, Kwangwon Lee, Daiwon Kim, Lieyi Sheng

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4386858948

FWCI: 0.491

Cites: 18

Cited by: 1

Related to: 10