Work

Giant tunnel magnetoresistance induced by thermal bias

Year: 2023
Type: article
Abstract: We analyze the spin-resolved transport and, in particular, the tunnel magnetoresistance of an asymmetric ferromagnetictunnel junction with an embedded quantum dot or molecule subject to thermal and voltage bias in the nonlinear responseregime. We demonstrate that such system exhibits a giant tunnel magnetoresistance effect that can be tuned by gateand bias voltages. Large values of magnetoresistance are associated with the interplay between the Kondo correlationsand the ferromagnetic-contact-induced exchange field. In particular, we show that the nonequilibrium current in theparallel and antiparallel magnetic configuration of the system changes sign at different values of the voltage and thermalbias. This gives rise to giant values of magnetoresistance, the sign of which can be control by the applied sources.
Language: English
Open Access status: hybrid
Estimated APC paid: $3,000
OpenAlex ID: W4386914128
FWCI: 0.233
Cites: 33
Cited by: 2
Related to: 10