Work

The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN

Year: 2023

Type: article

Source: Journal of Alloys and Compounds

DOI: 10.1016/j.jallcom.2023.172560

Authors: Yuan Gao, Xinhao Wang, Shengrui Xu, Jiaduo Zhu, Huake Su, Ruobing Wang, Hongchang Tao, Xu Liu, Jincheng Zhang, Yachao Zhang, Yue Hao

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National University's Basic Research Foundation of China, State Key Laboratory on Integrated Optoelectronics, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities, Natural Science Basic Research Program of Shaanxi Province

Awards: G2890996551, G3925733209, G3927197278, G3950117939, G6503941701, G8561519819

OpenAlex ID: W4387763290

FWCI: 0.636

Cites: 40

Cited by: 6

Related to: 10