2-Aminoanthracene Crystallization in Its Compatible Polystyrene Block: RAFT Synthesis and Enhanced Charge Retention in Pentacene Transistor Gate Dielectrics
Year: 2023
Type: article
Abstract: We synthesized polystyrene- block -polyanthrylaminomethylstyrene (PS- b -PAAS) via the RAFT reaction and side chain modification, where the PAAS block is 50%. By blending 2-aminoanthracene (2AA) with PS- b -PAAS, the coaggregation behavior of the PAAS block and 2AA within the thin film was observed by optical microscopy (OM) and X-ray diffraction. At 5 and 10 wt % 2AA within the thin film, OM results showed a clear morphological difference between the PS matrix and PS- b -PAAS matrix. Differences in the 2AA excited-state lifetimes in these matrices were also established by using transient absorption spectroscopy (TAS). Blends were used as gate dielectrics in the pentacene transistors. We compared characteristic voltage ( V c, an indicator of threshold voltage) before and after charging of PS- b -PAAS blended with unsubstituted PS and both polymers individually blended with 2AA. For blended PS- b -PAAS and PS, as the concentration of PS- b -PAAS increases, the decreased V c especially with negative charging of the pentacene indicated a larger concentration of charge carriers induced by the dielectric film. The charging experiments also revealed that the unique structure formed by the 2AA/PS- b -PAAS blend significantly affected the charge storage capability of organic field-effect transistors (OFETs). This work demonstrates the novel coaggregation structure in the dielectrics and furthermore its impact on charge storage capability in pentacene OFETs.
Source: Macromolecules
Institution: Johns Hopkins University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4387769580