Fast low bias pulsed DC transport measurements for the investigation of low temperature transport effects in semiconductor devices
Year: 2023
Type: article
Abstract: We present a setup for fast, low-bias (≤1mV) DC transport measurements with μs time resolution for high ohmic resistance (≈20kΩ) semiconducting samples. We discuss the circuitry and instrumentation for the measurement approach that can be applied to any kind of semiconductor device or (gated) two-dimensional material and demonstrate the main measurement artifacts in typical measurements by means of circuit simulation. Based on the latter, we present a simple two-step protocol for eliminating the measurement artifacts reliably. We demonstrate the technique by measuring the transitions between quantum Hall plateaus in the HgTe quantum wells and resolve plateaus as short-lived as 100 μs.
Source: Journal of Applied Physics
DOI: 10.1063/5.0170478
Authors: C. Fuchs, M. Hofer, L. Fürst, S. Shamim, T. Kießling, H. Buhmann, L. W. Molenkamp
Institution: University of Würzburg
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,500
OpenAlex ID: W4388224014