Work

Reducing proton radiation vulnerability in AlGaN/GaN high electron mobility transistors with residual strain relief

Year: 2023

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0169886

Authors: Nahid Sultan Al-Mamun, Joonyup Bae, Jihyun Kim, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen J. Pearton

Institutions: Pennsylvania State University, Seoul National University, University of Florida

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Defense Threat Reduction Agency, Division of Electrical, Communications and Cyber Systems

Awards: G6238142998, G7645693813, G772299097

OpenAlex ID: W4389479033

FWCI: 0.543

Cites: 69

Cited by: 6

Related to: 10