Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering
Year: 2023
Type: article
Abstract: The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore’s Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr0.2Ti0.8O3 gate and an RNiO3 (R: rare earth)/La0.67Sr0.33MnO3 composite channel. The ultrathin La0.67Sr0.33MnO3 buffer layer not only tailors the carrier density profile in RNiO3 through interfacial charge transfer, as corroborated by first-principles calculations, but also provides an extended screening layer that reduces the depolarization effect in the ferroelectric gate. Our study points to an effective material strategy for the functional design of complex oxide heterointerfaces that harnesses the competing roles of charge in field effect screening and ferroelectric depolarization effects.
Source: Nature Communications
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,290
Funders: National Science Foundation, U.S. Department of Energy, Semiconductor Research Corporation, New York University Shanghai, Ministry of Science and Technology of the People's Republic of China, Science and Technology Commission of Shanghai Municipality, Directorate for Engineering, Directorate for Mathematical and Physical Sciences, Office of Science, Division of Materials Research, Division of Electrical, Communications and Cyber Systems, Office of Experimental Program to Stimulate Competitive Research, Brookhaven National Laboratory
Awards: G1263877917, G1285306620, G1286853602, G1384914813, G2011318139, G2063197924, G241279073, G267655573, G3104051767, G3262563802, G357145406, G407634895, G4615928908, G4711139145, G4928852893, Exploring Spin-Orbit Coupling and Correlated Phenomena in Iridate-Based Ferroelectric Transistors and Tunnel Junctions, G5765906131, NNCI: Nebraska Nanoscale Facility (NNF), G6083688656, G6482301493, RII Track-1: Emergent Quantum Materials and Technologies (EQUATE), G872144517
OpenAlex ID: W4389612381