Year: 2023
Type: preprint
Abstract: Semiconductors are currently an active topic of study due to the endless range of applications in electronic hardware and computer engineering. In this experiment, the material properties (i.e. resistivity $ρ$, Hall coefficient $R_{H}$, and mobility $μ$) of a doped GaAs sheet is described by utilizing Hall Effect and the Van der Pauw method with varying temperature $T$ and magnetic field values $B$. It is determined that the sample is an $n$-type semiconductor using the sign of $R_H$, which is measured to be $R_H = -2.9 \times 10^{-12} \pm 0.1 \times 10^{-14} ~ \text{m}^{3} \text{C}^{-1}$, at $T = 303 ~\text{K}$ and $B = 3.3 ~\text{kGs}$. Furthermore, the rate of change for the slope $R_H$ and $T$ is increasing along $B$ at the rate of $Δk/ ΔB = \left(3.6 \pm 0.5 \right) \times 10^{-16} ~\text{m}^3 (\text{CK} \cdot \text{kGs})^{-1}$, meaning the charge accumulation caused by the current and Lorentz force is quadratic in $B$. It is also discovered that $μ$, and therefore the electron drift velocity is reduced proportionally at higher $T$-values. This method provides a potential analogue in quantum scales with the Quantum Hall Effect and characterisation of quantum dots.
Source: arXiv (Cornell University)
Author: Rili, James Paolo
Institution: University of British Columbia
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4389650580