Work

Investigation on Degradation of 1200-V Planar and Trench SiC MOSFET Under Surge Current Stress of Body Diode

Year: 2023

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2023.3335892

Authors: Xinbin Zhan, Yanjing He, Jiankun Lai, Hao Yuan, Qingwen Song, Xiaoyan Tang, Xiaowu Gong, Yuming Zhang

Institution: Xidian University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Special Project for Research and Development in Key areas of Guangdong Province

Awards: G4220763129, G4403605009, G8589913278

OpenAlex ID: W4389799456

FWCI: 3.2

Cites: 23

Cited by: 43

Related to: 10