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Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Year: 2023

Type: article

Source: ACS Photonics

DOI: 10.1021/acsphotonics.3c01261

Authors: Haodong Wang, Meixin Feng, Yaozong Zhong, Xin Chen, Hongwei Gao, Ercan Yilmaz, Qian Sun, Hui Yang

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics, Bolu Abant İzzet Baysal University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4390057929

FWCI: 3.35

Cites: 45

Cited by: 37

Related to: 10