Year: 2024
Type: article
Abstract: Long-wavelength near-infrared light-emitting diodes (NIR LEDs) with peak emission wavelengths beyond 900 nm are of critical importance for various applications including night vision, biomedical imaging, sensing and optical communications. However, the low radiance and poor operational stability of state-of-the-art long-wavelength NIR LEDs based on soft materials remain the most critical factors limiting their practical applications. Here we develop NIR LEDs emitting beyond 900 nm with improved performance through the rational manipulation of p doping in all-inorganic tin perovskites (CsSnI 3 ) by retarding and controlling the crystallization process of perovskite precursors in tin-rich conditions. The resulting NIR LEDs exhibit a peak emission wavelength at 948 nm, high radiance of 226 W sr −1 m −2 and long operational half-lifetime of 39.5 h at a high constant current density of 100 mA cm −2 . Our demonstration of efficient and stable NIR LEDs operating at high current densities may also open up new opportunities towards electrically pumped lasers.
Source: Nature Photonics
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $12,290
Funders: European Commission, National Research Foundation, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, National Natural Science Foundation of China, National Science Council, Chinese Academy of Sciences, Beijing Normal University, Linköpings Universitet, Knut och Alice Wallenbergs Stiftelse, Vetenskapsrådet, Ministry of Education, India, National Outstanding Youth Science Fund Project of National Natural Science Foundation of China, Institute of Chemistry, Chinese Academy of Sciences, National Key Research and Development Program of China, HORIZON EUROPE European Research Council
Awards: G1102989873, G1441096865, G193668846, G2144212310, G2156986825, G2416599479, G2509613613, G3321450376, G3504449619, G3631573628, G3660243324, G3674547128, G434337789, G4435536379, G5054645909, G5284778973, G5665484064, Metal halide perovskite light-emitting diodes with long-term operational stability, G5976972046, G6625919268, G6723146472, PERovskite SEmiconductors for PHOtoNics, G6758818580, G712881263, Study of carrier transport in MAterials by time-Resolved specTroscopy with ultrashort soft X-ray light, Dynamically disordered solids as advanced energy materials, Electrically Pumped Perovskite Lasers, G7864457617, G796431723, G834796695, G8436673617, NAISS
OpenAlex ID: W4390614324