Work

Electrical manipulation of valley qubit and valley geometric phase in lateral monolayer heterostructures

Year: 2024

Type: article

Abstract: We explore a solid-state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer ${\mathrm{MoS}}_{2}/{\mathrm{WS}}_{2}$ lateral junction where a steep dipolar potential emerges. We show that the junction oriented along an armchair direction can induce intervalley transitions of the electron confined in the neighboring quantum dot when the (gate-controllable) overlapping with the junction is significant and pumping frequency tuned. The pumping scheme that induces transitions is all-electrical: Obtained by applying oscillating voltages to control gates and thus enabled for scalable qubit architectures. We also report another possibility of valley qubit manipulation by accumulating non-Abelian valley Berry phase. To model the nanodevice we solve the time-dependent Schr\"odinger-Poisson equations in a tight-binding approach and obtain exact time evolution of the valley qubit system.

Source: Physical review. B./Physical review. B

DOI: 10.1103/physrevb.109.045411

Authors: Jarosław Pawłowski, John Eric Tiessen, Rockwell Dax, Junxia Shi

Institutions: Wrocław University of Science and Technology, University of Illinois Chicago

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: Narodowym Centrum Nauki, Infrastruktura PL-Grid

Award: G4378772839