Work

A Two-Way GaN Doherty Amplifier for 5G FR2 With Extended Back-Off Range

Year: 2024

Type: article

Abstract: This article presents the design and experimental characterization of a two-way gallium nitride on silicon carbide (GaN-SiC) monolithic Doherty power amplifier (DPA) for deep back-off operation in the 5G FR2 band. The amplifier, including two driver stages on-chip, achieves 35-dBm output power, 30% power-added efficiency, and 16-dB gain at saturation at 29 GHz. It favorably compares with the present state of the art, maintaining a power-added efficiency higher than 27%, 28%, and 22% at 6-, 9-, and 12-dB output power back-off, respectively.

Source: IEEE Microwave and Wireless Technology Letters

DOI: 10.1109/lmwt.2024.3350435

Authors: Rocco Giofrè, Anna Piacibello, Vittorio Camarchia, Paolo Colantonio

Institutions: University of Rome Tor Vergata, Politecnico di Torino

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,495

OpenAlex ID: W4390938807