OpenAlex | Monolithic fully-controlled HEMT bidirectional power switch with merged Schottky barrier diodes and p-GaN gate transistors for ultra-low turn-on voltage and high threshold voltage

Monolithic fully-controlled HEMT bidirectional power switch with merged Schottky barrier diodes and p-GaN gate transistors for ultra-low turn-on voltage and high threshold voltage

Work

Year: 2024

Type: article

Abstract: A monolithic fully-controlled high electron mobility transistor (HEMT) bidirectional power switch (FC-HEMT BPS) is studied and implemented for ultra-low turn-on voltage and high threshold voltage. Th... more

Source: Japanese Journal of Applied Physics

Authors Guoliang Peng, Wei Mao, Shihao Xu, Cui Yang, Yue Peng +7 more

Institution Xidian University

Cites: 18

Cited by: 2

Related to: 10

FWCI: 1.381

Citation percentile (by year/subfield): 65.36

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Sustainable Development Goal Affordable and clean energy

Open Access status: bronze