Work

Investigation of Short-Circuit Failure Mechanism in 1.2kV SiC MOSFET

Year: 2023

Type: conference-paper

Source: IEEE International Power Electronics and Application Symposium (PEAS)

DOI: 10.1109/peas58692.2023.10395278

Authors: Houcai Luo, Huan Wu, Jingping Zhang, Bofeng Zheng, Xianping Chen

Institution: Chongqing University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: 基于高通量的Janus型二维气敏材料设计与性能调控研究

OpenAlex ID: W4391237095

FWCI: 2.051

Cites: 18

Cited by: 4

Related to: 10