AlScN/n-GaN Ferroelectric Memristors With Controllable On/Off Ratios and Reversible Bipolar Resistive Switching Characteristics
Work
Year: 2024
Type: article
Source: IEEE Electron Device Letters
Institutions Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, University of Chinese Academy of Sciences
Cites: 35
Cited by: 4
Related to: 10
FWCI: 2.591
Citation percentile (by year/subfield): 100
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Sustainable Development Goal Affordable and clean energy
Open Access status: closed
Funders National Natural Science Foundation of China, National Natural Science Foundation of China, National Key Research and Development Program of China, Jilin Scientific and Technological Development Program
Grant IDS 62121005, 12204475, 2022YFB3605600, 20220508018RC