Year: 2024
Type: preprint
Abstract: Contact engineering has been widely exploited in integrated circuits and functional devices for high performance and low power consumption. In this work, we develop an in-situ, reversible, and full-device-scale approach to tunable 2D van der Waals contacts. Ideal p-type Schottky contact free from dangling bonding and Fermi-level pinning are constructed at the structural superlubric graphite-MoS2 interfaces. Electronic tunneling across the interface can then be activated by applying pressure beyond a threshold where a transition in the nature of electronic coupling occurs and further amplified at higher load. A record-high ideality factor approaching 1 and an off-state current of 10-11 A were reported. We showcase a wearless Schottky generator operating at the 2D contact with an optimized exceptional overall efficiency of 50% in converting weak and random external stimuli into electricity. The device reaches a high current density of 31 A/m2 and endures over 120,000 cycles, which can find applications in neuromorphic computing and mechanosensing.
Source: Research Square
Authors: Zhiping Xu, Zhaokuan Yu, Xuanyu Huang, Jinbo Bian, Yuqing He, Xin Lu, Quanshui Zheng
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4392474067