Work

Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defects

Year: 2024

Type: article

Abstract: layer, which was verified by investigating the Ag atomic percentage using XPS and vertical EDX and by measuring the relaxation time of 0.8 ms. Verified volatile switching device demonstrated the biological synaptic properties of quantum conductance, short-term memory, and long-term memory due to controlling the Ag. Diffusion memristors using designed control and switching layers as following film density and oxygen vacancy have improved results as low-power devices and neuromorphic devices compared to other diffusion-based devices, and these properties can be used for various applications such as selectors, synapses, and neuromorphic devices.

Source: Nanoscale Horizons

DOI: 10.1039/d3nh00571b

Authors: Yu-Rim Jeon, Deji Akinwande, Changhwan Choi

Institutions: The University of Texas at Austin, Hanyang University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: National Research Foundation, Ministry of Trade, Industry and Energy, National Research Foundation of Korea

Awards: G1742393441, G1839720611, G4827066958, G623835629, G7902031766