Work

Structural Features of the Epitaxial Layer of the (GaAs)1−y−z(Ge2)y(ZnSe)z Solid Solution Grown from a Bismuth Solution Melt

Year: 2024

Type: article

Abstract: This paper presents the results of experimental studies of the structural characteristics of the epitaxial layers of GaAs1−x−yZnSexGey solid solutions grown from a bismuth solution-melt on GaAs substrates with (100) crystallographic orientation. The grown epitaxial film of the GaAs1−x−yZnSexGey solid solution is a single crystal with a sphalerite-like structure with the (100) orientation corresponding to the substrate orientation. It is shown that ZnSe molecules partially replace GaAs molecules in defect-capable regions of the (100) matrix crystal lattice at the high-potential sites.

Source: e-Journal of Surface Science and Nanotechnology

DOI: 10.1380/ejssnt.2024-012

Authors: A. S. Saidov, M. Kalanov, D. V. Saparov, Sh. N. Usmonov, D. A. Eshonkhojaev, M. B. Tagaev, A. M. Akhmedov

Institutions: Academy of Sciences Republic of Uzbekistan, Physicotechnical Institute, Institute of Nuclear Physics, Andijan Machine-building Institute, Karakalpak State University, Tashkent Institute of Irrigation and Agricultural Mechanization Engineers

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $93

OpenAlex ID: W4393859412

FWCI:

Cites: 28

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Related to: 10