Work

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes (Adv. Funct. Mater. 15/2024)

Year: 2024

Type: article

Abstract: Hexagonal Boron Nitride In article number 2300428, Alwin Daus, Max C. Lemme, and co-workers explore hexagonal boron nitride (h-BN) memristors for future computing. Based on temperature-dependent current-voltage analysis of Ni/h-BN/Ni threshold memristors, they suggest a bias stress-induced Ni-filament formation and self-rupture mechanism, in line with previous studies on h-BN memristors. In conclusion, a valuable method is presented that can be adopted to investigate the RS mechanism of 2D-materials-based memristors.

Source: Advanced Functional Materials

DOI: 10.1002/adfm.202470085

Authors: Lukas Völkel, Dennis Braun, Melkamu Belete, Satender Kataria, Thorsten Wahlbrink, Ke Ran, Kevin Kistermann, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme

Institutions: RWTH Aachen University, AMO (Germany), Forschungszentrum Jülich, Ernst Ruska Centre

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4394689597

FWCI: 0.312

Cites:

Cited by: 3

Related to: 10