Work

Reconfigurable Two-dimensional Floating Gate Field-effect Transistors for Highly Integrated In-memory Computing

Year: 2024

Type: preprint

Source: Research Square

DOI: 10.21203/rs.3.rs-4101407/v1

Authors: Gwan-Hyoung Lee, Cheol Seong Hwang, June-Chul Shin, Taegyun Park, Dong Hoon Shin, Hyun-Young Choi, Kenji Watanabe, Takashi Taniguchi, Yeonwoong Jung

Institutions: University of Central Florida, Seoul National University, National Institute for Materials Science

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: National Research Foundation, Ministry of Education, Culture, Sports, Science and Technology, Seoul National University, Japan Society for the Promotion of Science, Institute of Engineering Research, Seoul National University

Awards: G2442584775, G3221144036, G3440990606, G4806815962, Synthesis of high quality single crystals for sience of Boron Nitride

OpenAlex ID: W4394993062

Cites: 36

Cited by:

Related to: 10