Work

Investigation of Robust Reliability Performance for 1.2kV 4H-SiC Trench MOSFET with deep P structure

Year: 2024

Type: conference-paper

Source: IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

DOI: 10.1109/edtm58488.2024.10511600

Authors: Jake Choi, Kwangwon Lee, Howard Kim

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4396710737

FWCI: 0.763

Cites: 4

Cited by: 1

Related to: 10