On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs
Year: 2024
Type: conference-paper
Authors: Mehak A. Mir, A. Thakare, M. A. Munshi, V. Avinash, S. Wani, Z. Khan, R. Chaudhuri, S. Karthik, R. Malik, V. Joshi, M. Shrivastava
Institution: Indian Institute of Science Bangalore
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Awards: G4382959029, G6969276089
OpenAlex ID: W4396949745