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The Effect of Depth, AIR Gap Width and ION Implant on Deep Trench Isolation for BCD Technology

Year: 2024

Type: conference-paper

DOI: 10.1109/cstic61820.2024.10532121

Authors: Chen Chen, Bo Kan, Yong Chen, Li Xiao, Li Wang, Hualun Chen

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4398198072

FWCI:

Cites: 6

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Related to: 10