Work

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate

Year: 2024

Type: article

Source: Science China Information Sciences

DOI: 10.1007/s11432-024-4003-y

Authors: Xiao Wang, Zhi-Yu Lin, Yuan-Hang Sun, Long Yue, Yu-Min Zhang, Jian-Feng Wang, Ke Xu

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics, Suzhou Research Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4399106303

FWCI: 0.724

Cites: 3

Cited by: 5

Related to: 10