Work

GaN Vertical MOSFETs With Monolithically Integrated Freewheeling Merged pn-Schottky Diodes (MPS-MOS) for 1.2-kV Applications

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3412102

Authors: Yuchuan Ma, Heng Wang, Sihao Chen, Chao Liu

Institutions: Shandong University, State Key Laboratory of Crystal Materials

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, Shenzhen Science and Technology Innovation Program, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1048439995, G4753993084, G4774104900, G8394673485, G8433338149, G8564812364

OpenAlex ID: W4399876873

FWCI: 0.723

Cites: 43

Cited by: 5

Related to: 10