Work

MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates

Year: 2024

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ad5cb2

Authors: Hironori Okumura, Joel B. Varley

Institutions: University of Tsukuba, Lawrence Livermore National Laboratory

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: New Energy and Industrial Technology Development Organization, Japan Society for the Promotion of Science, Basic Energy Sciences

Awards: G129027128, Fabrication of vertical AlN devices

OpenAlex ID: W4400066762

FWCI: 0.783

Cites: 52

Cited by: 10

Related to: 10