Work

Tailoring Optical Transitions with GaAs/AlGaAs Quantum Bragg Mirror Detectors (QBMDs)

Year: 2024

Type: article

Abstract: The quantum Bragg mirror detector (QBMD) is an innovative class of photodetectors designed to explore optical transitions from the ground state to bound states or to leaky electronic states in the continuum. In this study, we explore an asymmetric QBMD based on GaAs/AlGaAs with a leaky electronic state in the continuum. The use of GaAs/AlGaAs provides unique flexibility in potential barrier manipulation, which is unattainable in InGaAs/InAlAs heterostructures lattice matched to InP. By tailoring the layers compositions and thicknesses, the heterostructure has been engineered to explore a transition at 111 meV (l = 11.2 µm) from the ground state to a leaky electronic state in the continuum. A judicious choice of the GaAs/AlGaAs physical parameters was carried out and the calculated photovoltaic photocurrent and absorption exhibit a strong correspondence.

Source: Journal of Integrated Circuits and Systems

DOI: 10.29292/jics.v19i2.804

Authors: Germano Maioli Penello, Pedro H. Pereira, Guilherme M. Torelly, Fernando M. Fernandes, James Rushing, Jacob A. Tenorio, Paul Simmonds, Alain A. Quivy

Institutions: Universidade Federal do Rio de Janeiro, Universidade de São Paulo, Universidade do Estado do Rio de Janeiro, Pontifícia Universidade Católica do Rio de Janeiro, Boise State University, Tufts University

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W4401441180

FWCI: 0.416

Cites: 16

Cited by: 4

Related to: 10