Work

Measurement of Interface State Density on Pn-paterned Si Surface Using High- and Low-frequency Kelvin Probe Force Spectroscopy

Year: 2024

Type: article

Abstract: We propose high-low frequency Kelvin probe force spectroscopy using high- and low-frequency AC bias voltages to measure the interface state density inside semiconductors. We derive an analytical expression for the electrostatic force between the tip and the sample that takes into account the charge transfer between the bulk and interface states in the semiconductor. We show that the electrostatic force between the tip and the semiconductor sample strongly depends on the capacitance of the charge depletion region on the surface and that the analysis of the electrostatic force at low- and high-frequency AC bias voltages can provide information on the interface state density in the semiconductor band gap. We also demonstrate using a pn-patterned silicon substrate that the interface state density can be measured.

Source: Vacuum and Surface Science

DOI: 10.1380/vss.67.370

Authors: Yan Jun LI, Yasuhiro SUGAWARA

Institution: The University of Osaka

Language: English

Topic: Force Microscopy Techniques and Applications

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

Funder: Japan Society for the Promotion of Science

Award: Optical transition states and intermolecular energy transfer interactions of organic molecules by photoinduced force microscopy