Work

Characterization of Switching Properties in ReRAM Devices by the Capacitance of the MIM Structure

Year: 2024

Type: article

Abstract: In this article, an analysis of the switching mechanism in Resistive Random-Access-Memory devices in relation to the capacitance variation of the Metal-Insulator-Metal structure is performed through experimental capacitance measurements. A variation in the capacitance was observed when a set of pulses with different widths and amplitudes was applied to the devices in the Multi-Level-Cell regime. The presence of multiple resistive states can be observed also with the changes in the dielectric constant of the material’s insulating layer. The migration of the defects inside dielectric is responsible for the devices exhibiting multiple capacitive reactance states, demonstrating the quantization of the conductance, required for the application in in-memory computing systems.

Source: Journal of Integrated Circuits and Systems

DOI: 10.29292/jics.v19i2.805

Authors: Fernando Jose Costa, Aseel Zeinati, Renan Trevisoli, Durga Misra, Rodrigo T. Doria

Institutions: Centro Universitário FEI, New Jersey Institute of Technology, Pontifícia Universidade Católica de São Paulo

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

Funders: Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico

Awards: G1441357285, G3642834282, G505476847