Work

Effect of multiple conductions on basic parameters in linear and saturation regions for a MIS-HEMT from 450 K down to 200 K

Year: 2024

Type: article

Abstract: In this work, the effect of multiple conductions on the basic parameters in linear and saturation regions of a GaN based Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT), when operating in a temperature range from 450 K down to 200 K, is evaluated experimentally. The threshold voltage behavior suggests that the HEMT conduction is dominating the device for low temperatures, while the MOS conduction is the dominant one for high temperatures. It is also shown that the presence of a high gate leakage current is degrading the switching efficiency and the ION/IOFF ratio of the device. The device presents a minimum Drain Induced Barrier Lowering (DIBL) of 27 mV/V (at 300 K) and the maximum of 62 mV/V (at 450 K).

Source: Journal of Integrated Circuits and Systems

DOI: 10.29292/jics.v19i2.812

Authors: Welder Fernandes Perina, Joao Antonio Martino, Eddy Simoen, Uthayasankaran Peralagu, Nadine Collaert, Paula Ghedini Der Agopian

Institutions: Universidade de São Paulo, IMEC, Universidade Estadual Paulista (Unesp)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

Funders: Fundação de Amparo à Pesquisa do Estado de São Paulo, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico

Award: High energy physics and instrumentation with the LHC-CERN