Work

Temperature Measurement of a Nanowire SOI Transistor Using a Parallel Gated SOI PIN Diode

Year: 2024

Type: article

Abstract: This paper outlines a technique for measuring the temperature rise in a nanowire SOI MOSFET, caused by the self-heating effect, utilizing a parallel gated PIN diode. The analysis is conducted through electrothermal 3D TCAD simulations across an environment temperature range of 300K to 600K. Additionally, the impact of the separation distance between the nanowire MOSFET and the PIN diode is thoroughly examined.

Source: Journal of Integrated Circuits and Systems

DOI: 10.29292/jics.v19i2.818

Authors: Felipe Rodrigues Gare Carnielli, Marcelo Antonio Pavanello

Institution: Centro Universitário FEI

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

Funders: Fundação de Amparo à Pesquisa do Estado de São Paulo, Conselho Nacional de Desenvolvimento Científico e Tecnológico

Awards: G1344229841, G295657101, Atomistic simulation of nanowire MOSFETs electrical properties, G940984943