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A High-Speed, Low-Power, High-Reliability and Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory

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Year: 2024
Type: article
Source: IEEE Transactions on Circuits and Systems I Regular Papers
DOI: 10.1109/tcsi.2024.3438282
Authors: Jiaxin Yang, Ziyang Guo, Shixuan Wang, Jilong Liu, Yue Zhang, Weisheng Zhao, Lang Zeng, Deming Zhang
Institution: Beihang University
Language: English

Topic: Radiation Effects in Electronics
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Beijing Municipal Natural Science Foundation
Awards: G1044640108, G1601514299, 面向端侧人工智能物联网(AIoT)的高效自旋存算一体芯片, G6737709517, G7664979664
OpenAlex ID: W4401507213
FWCI: 1.238
Cites: 43
Cited by: 12
Related to: 10
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