Work

First Demonstration of Top-Gate Enhancement- Mode ALD In 2 O 3 FETs With High Thermal Budget of 600 ° C for DRAM Applications

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3442729

Authors: Jian-Yu Lin, Zhuocheng Zhang, Zehao Lin, Chang Niu, Yizhi Zhang, Yifan Zhang, Taehyun Kim, H. Jang, C. Sung, M. Hong, S. M. Lee, T. Lee, M. H. Cho, D. Ha, Changwook Jeong, Haiyan Wang, M. A. Alam, Peide D. Ye

Institutions: Purdue University West Lafayette, Ulsan National Institute of Science and Technology, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Air Force Office of Scientific Research

OpenAlex ID: W4401507807

FWCI: 1.848

Cites: 15

Cited by: 18

Related to: 10