Work

An NEGF-Based Comprehensive Analysis of Parasitic Effects in Stacked Nanosheet FETs at 1.5-nm Technology Node

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3438678

Authors: Shuo Zhang, Zhicheng Guo, Hao Xie, Sichao Du, Wenchao Chen, Duo Xiao, Xuegong Yu, Wen-Yan Yin

Institutions: Hangzhou City University, Zhejiang University, State Key Laboratory of Silicon Materials

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1606149528, G4749324214, G4751419525, G5816471191, 毫米波纳米片场效应管中载流子近似弹道输运特性与等效电路建模方法研究, G7453216952

OpenAlex ID: W4401507998

FWCI:

Cites: 33

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Related to: 10